By adding these transition layers, the storage characteristics of ferroelectric field-effect transistors have been improved to a certain extent,
3 Srbi2ta2o9 Iron Thin Film Srbi2ta2o9 (abbreviated as sbto) is a layered perovskite structure with lattice constants of a=b=0.39nm and c=2.51nm.
Table 1sbto's dielectric properties (800 ℃, 1 h)
〔1〕scott j f,araujo c a.ferroelectric memories〔j〕.science,1989,246:1400~1405.
Judgment of the quality of field-effect transistors and precautions during use
Judgment of the Quality of Field Effect Transistors